FQPF17N08 Datasheet, MOSFET, Fairchild Semiconductor

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FQPF17N08 Features and benefits

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* 11.2A, 80V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 28 pF) Fast switching 100% avalanch.

FQPF17N08 Application

such as automotive, high efficiency switching for DC/DC converters, and DC motor control. TM Features
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FQPF17N08 Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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